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Marking diagram $y&z&3&k fch 35n60 $y &z &3 &k fch35n60 = on semiconductor logo = assembly plant code = numeric date code = lot code = specific device code With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without. 场效应管 (MOSFET) SPW35N60C3由Infineon (英飞凌)设计生产，立创商城现货销售，正品保证，参考价格￥35.43，封装为TO-247AC-3。 商城还提供SPW35N60C3专业规格书、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。
Ixdr 35n60 bd1 symbol conditions characteristic values (t = 25°c, unless otherwise specified) j Legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics * * !*, ' ( ) * ) * + * +
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35N60 数据表. 部件名: 35N60A. 数据表: 851Kb/5P. 制造商: DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD. 功能描述: 35A 600V N-channel enhanced field effect transistor. 2 Results. 部件名: 35N60C3. 数据表: 724Kb/11P. 制造商: Infineon Technologies AG.
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